Alwan M. Alwan
Abstract
In this work, as Study on the structural and electrical properties ofPbo.9Sn0.1Se/Si hetrojunction was made by depositing compound of Lead, Tinand Selenide film on Si by thermal evaporation.XRD ...
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In this work, as Study on the structural and electrical properties ofPbo.9Sn0.1Se/Si hetrojunction was made by depositing compound of Lead, Tinand Selenide film on Si by thermal evaporation.XRD diffraction analysis of the film, shows the dominant crystalorientation is (200) as well as (Pbo.9Sn0.1Se) film deposited is polycrystallinestructure.Electrical properties of Pbo.9Sn0.1Se/Si heterojunction detector have beeninvestigated. The electrical properties under dark condition show a rectifyingbehavior with low rectification factor, and exhibit soft breakdown reversecurrent. C-V characteristics suggest that the fabricated diode was abrupttype, built in potential determined by extrapolation from 1/C2-V curve to thepoint (V=0) and it was equal to (0.4V).
